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Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV.
Thin Films, NiS, Electrodeposition, Semiconductor
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