OPEN ACCESS
The effect of post heat treatment on structural, morphological and optical properties of electrodeposited CdSSe solid solution thin films were studied using X-ray diffractometer (XRD), scanning electron microscopy (SEM), and UV-Vis-NIR spectrophotometer, respectively. X-ray diffraction patterns revealed that polycrystalline nature with hexagonal structure of CdSSe thin films. Also the microstructural properties are calculated tends to increase and the face centred hexagonal orientation of CdSSe thin film is enhanced significantly by increasing the annealing temperature. Scanning electron microscopic images revealed that the hexagonal shaped grains are occupying the entire surface of the film. The optical transmittance and absorption spectra were recorded in the range 400 to1100 nm. The band gap of the CdSSe thin films was found to decrease from 2.0 eV to 1.8 eV due to annealing temperature. The real part of the complex refractive index (n) and the imaginary part extinction coefficient (k) were calculated before and after annealing.
thin films, electrodeposition, cdSSe, semiconductor
[1] C.D. Lokhande, Mater. Chem. and Phys., 27, 1 (1991) .
[2] C.D. Lokhande, S.H. Pawar, “Proc. of Workshop on Solid State Energy Conversion”, Kolhapur, India, May 1985.
[3] G. Hodes, J. Manssen, D. Cahen, in “Inorganic Synthesis”, Ed., S.L. Holt, Wiley, New York, USA, 1983, p. 80.
[4] D.Raja Reddy, B.K. Reddy, “Proc. of Conference on the Physics and Technology of Semiconductor Devices and Integrated Circuits”, Madras, India, Feb. 5-7, 1992.
[5] D. Bhattacharya, S. Mohanty, S.N. Sahu, “Proc. of Solid State Physics Symposium”, Bombay, India, December 27-31, 1993.
[6] M.C. Tamargo, “Proceedings of the 2nd International Symposium on Blue Laser & Light Emitting Diodes”, Chiba, India, 1998.
[7] A. Jia, J. Crystal Growth, 214/215, 1085 (2000).
[8] I.V. Bradley, J.P. Creasey, K.P. O’Donnell, J. Crystal Growth, 184, 728 (1998).
[9] R.S. Mane, C.D. Lokhande, Thin Solid Films, 304, 56 (1997).
[10] Guojia J. Fang, Dejie Li and Bao-Lun Yao, Thin Solid Films, 418, 156 (2002)
[11] Jianhua Hu, Roy G. Gordon, “AIP Conf. Proc.”, 268, 381 (1992).
[12] B.D. Cullity, “Elements of X-ray Diffraction”, Addison-Wesley Publishing Company Inc., UK, 1978.
[13] Gopal, S., C. Viswanathan, B. Karunagaran, Sa. K. Narayandass, D. Mangalaraj, J. Yi, Cryst. Res. Technol., 40, 557 (2005).
[14] S. Kose, F. Atay, V. Bilgin, I Akyuz, J. Mat. Chem. and Phys., 111, 351 (2008).
[15] T. Mahalingam, S. Thanikaikarasan, V. Dhanasekaran, A. Kathalingam, S. Velumani, Jin-Koo Rhee, Materials Science and Engineering B (Article in Press).
[16] M.H. Mamat, S. Amizam, H.A. Rafaie, H. Hashim, A. Zain Ahmed, S. Abdullah, M. Rusop , “AIP Conf. Proc.”, 1017, 139 (2008).
[17] N. Bouhssira, S. Abed, E. Tomasella, J. Cellier, A. Mosbah, M. S. Aida, M. Jacquet, Appl. Surf. Sci., 252, 5594 (2006).
[18] N. Benramdane, W.A. Murad, R.H. Misho, M. Ziane, Z. Kebbab, J. Mat. Chem. and Phys., 48, 119 (1997).
[19] E. Fatas, P. Herrasti, F. Arjona, E. Garciacamarero and J.A. Medina, Electrochim. Acta., 32, 139 (1987).
[20] T. Mahalingam, V. Dhanasekaran, G. Ravi, Soonil Lee, J.P. Chu, Han-Jo Lim, J. Optoelectron. Adv. mater., 12, 1327 ( 2010).
[21] E. Marquez, J. Ramirez, P. Villares, R. Jimenez, P.J.S. Ewen, A.E. Owen, J. Phys. D: Appl. Phys., 25, 535 (1992).
[22] S. Thanikaikarasan, T. Mahalingam, M. Raja, Taekyu Kim, Y.D. Kim, J. Mater. Sci. Mater. Electron., 20, 727 (2009).