Plasma Enrichment of Electrochemical Properties of Conductive Polymers

Plasma Enrichment of Electrochemical Properties of Conductive Polymers

P. PietrowskiG. Lota  D. Pęziak K. Lota 

Personal Protective Department, Central Institute for Labour Protection – National Research Institute, Czerniakowska 16, 00-701 Warsaw, Poland

Institute of Chemistry and Technical Electrochemistry, Poznan University of Technology, Piotrowo 3, 60-965 Poznan, Poland

Institute of Non-Ferrous Metals Division in Poznan Central Laboratory of Batteries and Cells, Forteczna 12, 61-362 Poznan, Poland

Corresponding Author Email: 
pipie@ciop.lodz.pl
Page: 
63-68
|
DOI: 
https://doi.org/10.14447/jnmes.v18i2.369
Received: 
20 January 2015
| |
Accepted: 
15 March 2015
| | Citation

OPEN ACCESS

Abstract: 

The polyaniline and polyaniline with carbon were treated in low temperature plasma process. Two steps treatment was applied, i.e. first with Ar and then with CO2 reactive gas in a new plasma device with rotary chamber. Textural properties of the polymers were characterized using low temperature isotherms of N2. Electrochemical properties of the polymers were carried out using galvanostatic studies, cycling voltammetry and electrochemical impedance spectroscopy. The physicochemical and electrochemical measurements have confirmed that capacitance properties are connected with a plasma exposition. Plasma modification process has visible influence on the changes in polymers porosity. The moderate increase of capacitance of the modified polymers has been also observed.

Keywords: 

conductive polymers, low temperature plasma, electrochemical properties

1. Introduction
2. Experimental
3. Results and Discussion
4. Conclusions
Acknowledgements

The publications has been based on results of research founded in a framework of statutory activities by the Ministry of Science and Higher Education intended for maintaining the scientific potential of CIOP-PIB in 2013-2014 years and by the National Science Centre of Poland, grant No DEC-2013/10/E/ST5/00719.

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