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Studies on Electrodeposited NiS Thin Films

Centre for Scientific and Applied Research, School of Basic Engineering and Sciences, PSN College of Engineering and Technology,Tirunelveli – 627 152, Tamil Nadu, India.

College of Physics and Information Engineering, Institute of Optoelectronic Display, Fuzhou University, Fuzhou-350 002, Republic of China.

DST-INSPIRE Faculty, Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology, Mumbai – 400 076, Maharastra, India.

Department of Electrical and Computer Engineering, Ajou University, Suwon – 443 749, Republic of Korea.

Universidad Politécnica del Estado de Guerrero, Campusano, Taxco, Guerrero, 40290, Mexico.n

Corresponding Author Email:

S_thanikai@rediffmail.com

Received:

January 07, 2014

| |

Accepted:

July 07, 2014

| | Citation

417-article_text-662-1-10-20170725.pdf

OPEN ACCESS

Abstract:

Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV.

Keywords:

Thin Films, NiS, Electrodeposition, Semiconductor

1. Introduction

2. Experimental Details

3. Results and Discussion

4. Conclusions

References

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Studies on Electrodeposited NiS Thin Films